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Philips Semiconductors Product specification

Thyristors

 

 

 

 

 

 

 

 

 

 

 

 

 

BT150 series

 

logic level

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GENERAL DESCRIPTION

QUICK REFERENCE DATA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Glass passivated,

sensitive gate

 

SYMBOL

 

PARAMETER

 

 

 

MAX.

MAX.

MAX.

UNIT

 

thyristors in a plastic envelope,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BT150-

 

500R

 

600R

 

800R

 

 

 

 

intended for use in general purpose

 

 

 

 

 

 

 

 

 

 

 

switching

and

phase

control

 

VDRM,

 

Repetitive peak off-state

 

 

 

500

 

 

600

 

 

800

 

 

V

 

applications.

These devices are

 

VRRM

 

voltages

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

intended to be interfaced directly to

 

IT(AV)

 

Average on-state current

 

 

 

2.5

 

 

2.5

 

 

2.5

 

 

A

 

microcontrollers,

logic

integrated

 

IT(RMS)

 

RMS on-state current

 

 

 

4

 

 

4

 

 

4

 

 

A

 

circuits and other low power gate

 

ITSM

 

Non-repetitive peak on-state

 

25

 

 

25

 

 

25

 

 

A

 

trigger circuits.

 

 

 

 

 

 

current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PINNING - TO220AB

 

PIN CONFIGURATION

SYMBOL

 

 

 

 

 

 

 

 

 

PIN DESCRIPTION

1cathode

2anode

3gate tab anode

tab

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

a k

g

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-500R

-600R

-800R

 

V

, V

RRM

Repetitive peak off-state

 

-

5001

6001

800

V

DRM

 

voltages

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half sine wave; Tmb ≤ 113 ˚C

 

 

 

 

 

IT(AV)

 

 

Average on-state current

-

 

2.5

 

A

IT(RMS)

 

RMS on-state current

all conduction angles

-

 

4

 

A

ITSM

 

 

Non-repetitive peak

half sine wave; Tj = 125 ˚C prior

 

 

 

 

 

 

 

 

on-state current

to surge; with reapplied VDRM(max)

-

 

25

 

A

 

 

 

 

t = 10 ms

 

 

 

 

 

 

t = 8.3 ms

-

 

27

 

A

I2t

 

 

I2t for fusing

t = 10 ms

-

 

3.1

 

A2s

dIT/dt

 

Repetitive rate of rise of

ITM = 10 A; IG = 50 mA;

-

 

50

 

A/μs

 

 

 

on-state current after

dIG/dt = 50 mA/μs

 

 

 

 

 

 

 

 

triggering

 

 

 

 

 

 

IGM

 

 

Peak gate current

 

-

 

2

 

A

VGM

 

 

Peak gate voltage

 

-

 

5

 

V

VRGM

 

Peak reverse gate voltage

 

-

 

5

 

V

PGM

 

 

Peak gate power

 

-

 

5

 

W

PG(AV)

 

Average gate power

over any 20 ms period

-

 

0.5

 

W

Tstg

 

 

Storage temperature

 

-40

 

150

 

˚C

Tj

 

 

Operating junction

 

-

 

125

 

˚C

 

 

 

temperature

 

 

 

 

 

 

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

February 1996

1

Rev 1.100

Philips Semiconductors Product specification

Thyristors

 

 

BT150 series

 

logic level

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL RESISTANCES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

Rth j-mb

Thermal resistance

 

-

-

2.5

K/W

 

 

junction to mounting base

 

 

 

 

 

 

Rth j-a

Thermal resistance

in free air

-

60

-

K/W

 

 

junction to ambient

 

 

 

 

 

 

STATIC CHARACTERISTICS

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

IGT

Gate trigger current

VD = 12 V; IT = 0.1 A

-

15

200

μA

 

IL

Latching current

VD = 12 V; IGT = 0.1 A

-

0.17

10

mA

 

IH

Holding current

VD = 12 V; IGT = 0.1 A

-

0.10

6

mA

 

VT

On-state voltage

IT = 5 A

-

1.23

1.8

V

 

VGT

Gate trigger voltage

VD = 12 V; IT = 0.1 A

-

0.4

1.5

V

 

ID, IR

 

VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C

0.25

0.3

-

V

 

Off-state leakage current

VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

-

0.1

0.5

mA

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

dVD/dt

Critical rate of rise of

VDM = 67% VDRM(max); Tj = 125 ˚C;

-

50

-

V/μs

 

 

off-state voltage

exponential waveform; RGK = 100 Ω

 

 

 

μs

 

tgt

Gate controlled turn-on

ITM = 10 A; VD = VDRM(max); IG = 5 mA;

-

2

-

 

 

time

dIG/dt = 0.2 A/μs

 

 

 

μs

 

tq

Circuit commutated

VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A;

-

100

-

 

 

turn-off time

VR = 10 V; dITM/dt = 10 A/μs;

 

 

 

 

 

 

 

dVD/dt = 2 V/μs; RGK = 1 kΩ

 

 

 

 

 

February 1996

2

Rev 1.100

Philips Semiconductors

Product specification

 

 

Thyristors

BT150 series

logic level

 

 

 

6

Ptot / W

 

 

 

BT148

 

 

Tmb(max) / C

 

 

 

 

 

 

110

 

conduction

form

 

 

 

 

 

 

 

angle

 

factor

 

 

 

 

 

 

5

degrees

 

a

 

 

 

 

 

112.5

30

 

4

 

 

 

 

 

 

 

 

 

 

1.9

 

 

 

60

 

2.8

 

 

2.2

a = 1.57

 

 

90

 

2.2

 

 

 

 

4

 

 

 

 

 

115

120

 

1.9

 

2.8

 

 

 

 

180

 

1.57

 

 

 

 

 

3

 

 

 

4

 

 

 

 

117.5

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

120

1

 

 

 

 

 

 

 

 

122.5

0

0

0.5

1

1.5

2

 

2.5

125

 

 

3

 

 

 

 

 

IF(AV) / A

 

 

 

 

Fig.1. Maximum on-state dissipation, Ptot, versus

average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).

1000

ITSM / A

 

BT148

 

 

dIT/dt limit

 

 

100

 

 

 

 

 

IT

ITSM

 

 

 

T

time

 

 

 

Tj initial = 125 C max

 

 

10

 

100us

1ms

10ms

10us

 

 

 

T / s

 

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.

5 IT(RMS) / A

 

BT148

 

 

4

 

 

 

113 C

 

 

 

 

3

 

 

 

 

2

 

 

 

 

1

 

 

 

 

0

0

50

100

150

-50

 

 

Tmb / C

 

 

Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.

30

ITSM / A

 

BT148

 

25

 

 

IT

ITSM

 

 

 

 

 

 

 

T

time

20

 

 

Tj initial = 125 C max

 

 

 

 

15

 

 

 

 

10

 

 

 

 

5

 

 

 

 

0

1

10

100

1000

 

 

Number of half cycles at 50Hz

 

Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

12

IT(RMS) / A

BT150

 

 

10

 

 

 

 

8

 

 

 

 

6

 

 

 

 

4

 

 

 

 

2

 

 

 

 

0

 

0.1

1

10

0.01

 

 

surge duration / s

 

 

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 113˚C.

 

VGT(Tj)

 

BT151

 

 

1.6

VGT(25 C)

 

 

 

1.4

 

 

 

 

 

1.2

 

 

 

 

 

1

 

 

 

 

 

0.8

 

 

 

 

 

0.6

 

 

 

 

 

0.4

 

0

50

100

150

-50

 

 

 

Tj / C

 

 

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

3

Rev 1.100

Philips Semiconductors

Product specification

 

 

Thyristors

BT150 series

logic level

 

 

 

 

IGT(Tj)

 

BT148

 

 

3

IGT(25 C)

 

 

 

2.5

 

 

 

 

 

2

 

 

 

 

 

1.5

 

 

 

 

 

1

 

 

 

 

 

0.5

 

 

 

 

 

0

 

0

50

100

150

-50

 

 

 

Tj / C

 

 

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)

 

 

 

IL(25 C)

BT145

 

 

3

 

 

 

 

2.5

 

 

 

 

2

 

 

 

 

1.5

 

 

 

 

1

 

 

 

 

0.5

 

 

 

 

0

0

50

100

150

-50

 

 

Tj / C

 

 

Fig.8.

Normalised latching current IL(Tj)/ IL(25˚C),

 

versus junction temperature Tj.

 

IH(Tj)

 

 

 

IH(25 C)

BT145

 

 

3

 

 

 

 

2.5

 

 

 

 

2

 

 

 

 

1.5

 

 

 

 

1

 

 

 

 

0.5

 

 

 

 

0

0

50

100

150

-50

 

 

Tj / C

 

 

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.

12

IT / A

 

BT148

 

 

 

 

 

Tj = 125 C

 

 

 

 

 

 

 

Tj = 25 C

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

Vo = 1.26 V

 

typ

 

max

 

 

 

Rs = 0.099 ohms

 

 

 

 

 

8

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

0

0

0.5

1

1.5

2

2.5

3

 

 

 

 

VT / V

 

 

 

Fig.10. Typical and maximum on-state characteristic.

10

Zth j-mb (K/W)

 

BT148

 

 

 

1

 

 

 

 

 

 

 

0.1

 

 

 

P

t p

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

t

0.01

 

0.1ms

1ms

10ms

0.1s

1s

10s

10us

 

 

 

 

tp / s

 

 

 

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.

1000

dVD/dt (V/us)

 

 

 

 

 

 

RGK = 100 ohms

 

100

 

 

 

 

10

 

 

 

 

1

0

50

100

150

 

 

 

Tj / C

 

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

February 1996

4

Rev 1.100

Philips Semiconductors Product specification

Thyristors

BT150 series

logic level

 

MECHANICAL DATA

 

Dimensions in mm

4,5

Net Mass: 2 g

max

10,3

 

max

1,3

3,7

 

2,8

5,9

 

min

15,8 max

3,0 max

3,0

not tinned

 

 

 

13,5

 

 

 

min

 

1,3

 

 

 

max

1 2 3

 

 

(2x)

 

0,9 max (3x)

0,6

 

 

 

 

2,54 2,54

 

2,4

 

 

 

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes

1.Accessories supplied on request: refer to mounting instructions for TO220 envelopes.

2.Epoxy meets UL94 V0 at 1/8".

February 1996

5

Rev 1.100

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