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Serial Downloading

Both the Flash and EEPROM memory arrays can be programmed using the serial SPI bus while RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and MISO (output). After RESET is set low, the Programming Enable instruction needs to be executed first before program/erase operations can be executed. NOTE, in Table 96 on page 234, the pin mapping for SPI programming is listed. Not all parts use the SPI pins dedicated for the internal SPI interface.

Serial Programming Pin

Mapping

Table 96. Pin Mapping Serial Programming

Figure 112. Serial Programming and Verify(1)

RESET

GND

Serial Programming

Algorithm

Data Polling Flash

2486O–AVR–10/04

ATmega8(L)

When writing serial data to the ATmega8, data is clocked on the rising edge of SCK.

When reading data from the ATmega8, data is clocked on the falling edge of SCK. See Figure 113 for timing details.

To program and verify the ATmega8 in the Serial Programming mode, the following sequence is recommended (See four byte instruction formats in Table 98):

1.Power-up sequence:

Apply power between VCC and GND while RESET and SCK are set to “0”. In some systems, the programmer can not guarantee that SCK is held low during Power-up. In this case, RESET must be given a positive pulse of at least two CPU clock cycles duration after SCK has been set to “0”.

2.Wait for at least 20 ms and enable Serial Programming by sending the Programming Enable serial instruction to pin MOSI.

3.The Serial Programming instructions will not work if the communication is out of synchronization. When in sync. the second byte (0x53), will echo back when issuing the third byte of the Programming Enable instruction. Whether the echo is correct or not, all four bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a positive pulse and issue a new Programming Enable command.

4.The Flash is programmed one page at a time. The page size is found in Table 89 on page 222. The memory page is loaded one byte at a time by supplying the 5 LSB of the address and data together with the Load Program memory Page instruction. To ensure correct loading of the page, the data Low byte must be loaded before data High byte is applied for a given address. The Program memory Page is stored by loading the Write Program memory Page instruction with the 7 MSB of the address. If polling is not used, the user must wait at least tWD_FLASH before issuing the next page. (See Table 97).

Note: If other commands than polling (read) are applied before any write operation (FLASH, EEPROM, Lock Bits, Fuses) is completed, it may result in incorrect programming.

5.The EEPROM array is programmed one byte at a time by supplying the address and data together with the appropriate Write instruction. An EEPROM memory location is first automatically erased before new data is written. If polling is not

used, the user must wait at least tWD_EEPROM before issuing the next byte. (See Table 97 on page 236). In a chip erased device, no 0xFFs in the data file(s) need to be programmed.

6.Any memory location can be verified by using the Read instruction which returns the content at the selected address at serial output MISO.

7.At the end of the programming session, RESET can be set high to commence normal operation.

8.Power-off sequence (if needed): Set RESET to “1”.

Turn VCC power off

When a page is being programmed into the Flash, reading an address location within the page being programmed will give the value 0xFF. At the time the device is ready for a new page, the programmed value will read correctly. This is used to determine when the next page can be written. Note that the entire page is written simultaneously and any address within the page can be used for polling. Data polling of the Flash will not work for the value 0xFF, so when programming this value, the user will have to wait for at