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166	4.1.4 Harmonic generation (second, third, fourth, ﬁfth, and sixth)	[Ref. p. 187

Table 4.1.19. Second harmonic generation of gas laser radiation.

Type of laser	Crystal	λ	θpm	T	Ref.
		[µm]	[deg]	[◦ C]
Argon laser	KDP a	0.5145	90	−13.7	[67Lab]
	ADP	0.4965	90	−93.2	[73Jai]
	ADP	0.5017	90	−68.4	[73Jai]
	ADP a	0.5145	90	−10.2	[73Jai]
	ADP	0.5145	90	−10	[82Ber]
	KB5	0.4579	67.2 (ϕpm)	20	[76Che]
	KB5	0.4765	60.2 (ϕpm)	20	[76Che]
	KB5	0.4880	56.6 (ϕpm)	20	[76Che]
	KB5	0.5145	50.2 (ϕpm)	20	[76Che]
	BBO	0.5145	49.5	20	[86Xin]
	BBO	0.4965	52.5	20	[86Xin]
	BBO	0.4880	54.5	20	[86Xin]
	BBO	0.4765	57.0	20	[86Xin]
	BBO a	0.4880	55	20	[89Zim]
	BBO a	0.5145	–	20	[92Tai]
He-Ne laser	LiIO3a	1.152 . . . 1.198	25	20	[83Kac]
	LiNbO3	1.152	90	169	[74Ant]
	LiNbO3	1.152	90	281	[75Kus]
	AgGaS2	3.39	33	20	[75Bad]
NH3 laser	Te	12.8	–	–	[80Sha]
	CdGeAs2	11.7	35.7	–	[87And3]
CO laser	ZnGeP2	5.2 . . . 6.3	47.5	–	[87And2]

a Intracavity SHG.

Table 4.1.20. Harmonic generation of CO2 laser radiation.

Crystal	λ	Nonli-	Type of	I0		L	η	Ref.
	[µm]	near	interaction,	[W cm−2]		[mm]	(power)
		process	θpm [deg]				[%]

Ag3AsS3	10.6	SHG	ooe, 22.5	1.1 ×	7	4.4	2.2	[75Nik2]
Ag3AsS3	10.6	SHG	ooe, 22.5	1.1 ×	106	4.4	2.2	[75Nik2]
AgGaSe2	10.6	SHG	ooe, 57.5	1.7 ×7	10	15.3	2.7	[74Bye]
AgGaSe2	10.25	SHG	ooe, 52.7	< 10		21	35	[85Eck]
AgGaSe2	10.6	SHG	ooe, 53	–		20	0.1 a	[97Sto]
ZnGeP2	9.19 . . . 9.7;	SHG	eeo, 76	–		–	5	[84And]
	10.15 . . . 10.8
ZnGeP2	8.6	SHG	eeo, 55.8	–		–	10.1	[87And4]
ZnGeP2	10.6	SHG	eeo, 76	109	7	3	49	[87And1]
ZnGeP2	10.26 . . . 10.61	SHG	eeo	4.4 ×	7	7.2	11.3	[93Bar2]
ZnGeP2	10.26 . . . 10.61	SHG	eeo	4.4 ×	107	7.2	11.3	[93Bar2]
ZnGeP2	9.6	SHG	eeo, 70	5.5 ×	10	10	8.1	[94Mas]
ZnGeP2	10.78	SHG	eeo, 90	–	107	10	–	[97Kat]
CdGeAs2	10.6	SHG	oeo, 48.4	1.4 ×	107	9	15	[74Kil]
CdGeAs2	10.6	SHG	eeo, 32.5	–		13	21	[76Men]
CdGeAs2	10.6	SHG	eeo, 32.5	–		13	0.44 a	[76Men]

(continued)

Landolt-B¨ornstein

New Series VIII/1A1

Ref. p. 187]				4.1 Frequency conversion in crystals						167

Table 4.1.20 continued.

Crystal			λ	Nonli-	Type of	I0		L	η	Ref.
			[µm]	near	interaction,	[W cm−2]		[mm]	(power)
				process	θpm [deg]				[%]

Tl3AsSe3			9.6	SHG	–	–		3.7	10.9	[87Pas]
Tl3AsSe3			9.6	SHG	ooe, 19	107		5 . . . 6	28	[89Auy]
Tl	AsSe		10.6	SHG	ooe		108	4.57	57	[91Suh]
3		3	9.25	SHG	ooe, 19	6.3 × 7		46	20	[96Suh]
Tl3AsSe3			9.25	SHG	ooe, 19	2	× 107	46	20	[96Suh]
GaSe			9.3 . . . 10.6	SHG	ooe, 12.8 . . . 14.4	2	× 10	6.5	9	[89Abd]
GaSe			9.2 . . . 11.0	SHG	ooe, 13	–		2.5	–	[95Bha]
CdGeAs2			–	THG	oeo, 45	–		4.5	1.5	[79Men]
Tl3AsSe3			9.6	THG	ooe, 21	107		5 . . . 6	–	[89Auy]
ZnGeP2			10.6	FOHG	eeo, 47.5	–		10	14 b	[87And1]
ZnGeP2			–	FOHG	eeo, 47.5	–		5	2	[85And]
ZnGeP2			10.6	FOHG	eeo, 47.8	–		10	–	[97Sto] a
ZnGeP2			9.55	FOHG	eeo, 49	–		10	10	[98Cho]
Tl3AsSe3			9.6	FOHG	ooe, 27	107		5 . . . 6	27 b	[89Auy]
Tl3AsSe3			9.6	FIHG	ooe, 28	107		5 . . . 6	45 c	[89Auy]

a Continuous-wave regime.

b Conversion e ciency from 2 ω . c Conversion e ciency from 4 ω .

4.1.5 Sum frequency generation

Table 4.1.21. Sum frequency generation of UV radiation in KDP.

λSF	Sources of interacting radiation	τp	Conversion	Ref.
[nm]		[ns]	e ciency,
			power, energy

190–212	SRS of 1.064 µm + sum frequency radiation	0.02	20–40 µJ	[85Tak]
	(220–250 nm) [83Tak]
215–223	2 ω of dye laser + Nd:YAG laser	10	10 kW	[76Mas1]
215–245	SRS of 266 nm (4 ω of Nd:YAG laser) + OPO	0.02	100 µJ	[83Tak]
	(0.9–1.4 µm)
217–275	2 ω of dye laser + Nd:YAG laser (1.064 µm)	25–30	50–55 %, 10	[83Kop]
			mW (average)
217–226	OPO (1.1–1.5 µm) + 4 ω of Nd:YAG laser (266 nm)	0.02	100 kW	[82Tan]
218–244	(269–315 nm) [79Ang] + Nd:YAG laser	0.03	0.1 mJ	[79Ang]
239	Nd:YAG laser (1.064 µm) + XeCl laser (308 nm)	0.7	50%	[81Lyu]
240–242	2 ω of ruby laser (347 nm) + dye laser	30	1 MW	[78Sti3]
257–320	Dye laser + argon laser	cw regime	0.2 mW	[77Bli]
269–315	SRS of 532 nm (2 ω of Nd:YAG laser) + 532 nm	0.03	1–3 mJ	[79Ang]
269–287	OPO (1.29–3.6 µm) + 3 ω of Nd:YAG laser (355 nm)	0.02	100 kW	[82Tan]
271	Two copper vapor lasers (511 and 578 nm)	35	1.5%, 100 mW	[89Cou]
288–393 a			(average)
288–393 a	OPO (0.63–1.5 µm) + 2 ω of Nd:YAG laser (0.532 nm)	0.02	100 kW	[82Tan]
360–415	Dye laser + Nd:YAG laser	25–30	60–70%	[79Dud]
362–432	Dye laser + Nd:YAG laser	0.03	20%	[76Moo]

a DKDP crystal was used.

Landolt-B¨ornstein

New Series VIII/1A1

168	4.1.5 Sum frequency generation	[Ref. p. 187

Table 4.1.22. Sum frequency generation of UV radiation in ADP.

λSF		Sources of interacting radiation	τp	Conversion	Ref.
[nm]			[ns]	e ciency,
				power, energy

208–214		2 ω of dye laser + Nd:YAG laser,	10	1.7 µJ	[76Mas1]
		θ = 90 ◦ , T = −120 ◦ . . . 0 ◦ C
222–235		2 ω of dye laser + Nd:YAG laser	10	10%	[76Mas1]
240–248		Dye laser + 2 ω of ruby laser, θ = 90 ◦ ,	30	4%, 1 MW	[78Sti3]
243–247	a	T = −20 . . . +80 ◦ C	cw regime	4 mW	[91Kal,
243–247		Dye laser + argon laser (363.8 nm)	cw regime	4 mW	[91Kal,
243 a					83Cou]
243 a		Dye laser + argon laser (351 nm), θ = 90 ◦ , T = 8 ◦ C	cw regime	0.3 mW	[83Hem1]
247.5		Dye laser + krypton laser (413.1 nm), θ = 90 ◦ ,	cw regime	–	[79Mar]
		T = −103 ◦ C
246–259		Dye laser + 2 ω of Nd:YAG laser, θ = 90 ◦ ,	10	1%, 3 µJ	[76Mas1]
252–268 a		T = −120 . . . 0 ◦ C
252–268 a		Dye laser + argon laser (477, 488, 497 nm), θooe = 90 ◦	cw regime	8 mW	[82Liu]
270–307		Dye laser + 2 ω of Nd:YAG laser, θooe = 81 ◦	ps regime	–	[76Moo]

a ADP crystal was placed in an external resonator.

Table 4.1.23. Sum frequency generation of UV radiation in BBO.

λSF	Sources of interacting radiation		τp	Conversion	Ref.
[nm]			[ns]	e ciency,
				power, energy

188.9–197	Dye laser (780–950 nm) + 2 ω of another dye laser		10	up to 0.1 mJ	[88Mue]
	(248.5 nm)
190.8–196.1	Ti:sapphire laser (738–825 nm) + 2 ω of Ar	laser	–	tens of nW	[91Wat]
	(257 nm)
193	Dye laser + KrF laser (248.5 nm)		9	0.2 %, 2 µJ	[88Mue]
193	Dye laser (707 nm) + 4 ω of Nd:YAG laser		90–250 fs	10 µJ (250 fs)	[92Hof]
193.3	Dye laser (724 nm, 5 ps) + 4 ω of Nd:YLF	laser	0.01	1.7 %, 4 µJ	[92Tom]
	(263 nm, 25 ps)			(2.5 mJ) a
193.4	FOHG of dye laser radiation (774 nm, 300 fs),		800 fs	0.5 µJ	[92Rin]
	ω + 3 ω = 4 ω			(1.5 mJ) a
194	Ti:sapphire laser + 2 ω of Ar laser (257 nm), three		–	0.016 mJ	[92Wat]
	crystal conﬁguration with external cavity
194	Diode laser (792 nm) + 2 ω of Ar laser (257 nm)		cw	2 mW	[97Ber]
195.3	THG of dye laser (T [crystal] = 95 K)		17	5 %, 8 µJ	[88Lok]
196–205	Dye laser + 2 ω of another dye laser		5	0.1 mJ	[92Hei]
197.7–202	THG of dye laser		0.008	1 %, 1–4 mW	[88Gus]
198–204	THG of dye laser		5	20 %, 1.7 mJ	[87Gla]
271	Two copper vapor lasers (511 and 578 nm)		35	0.9 %, 64 mW	[89Cou]
362.6–436.4	Dye laser + Nd:YAG laser, noncollinear SFG		–	1 %, 0.065 mJ	[90Bha1]
	(NCSFG), α = 4.8 . . . 21.3 ◦
369	Diode laser (1310 nm) + Ar laser (515 nm)		–	1.3 µW	[91Sug]
370.6	Dye laser (568.6 nm) + Nd:YAG laser, NCSFG,		–	8–18%	[92Bha]
	α = 6.3 ◦

a After ampliﬁcation in an ArF excimer gain module.

Landolt-B¨ornstein

New Series VIII/1A1

Ref. p. 187]	4.1 Frequency conversion in crystals	169

Table 4.1.24. Sum frequency generation of UV radiation in LBO.

λSF	Sources of interacting radiation	τp	Conversion	Ref.
[nm]		[ns]	e ciency,
			power, energy

170–185 a	OPO (1.6–2.5 µm) + 4 ω of Ti-sapphire laser	100 fs	4	[98Pet3]
	(189–210 nm), θ = 66–90 ◦ , ooe
172.7–187	OPO (1.65–2.15 µm) + 4 ω of Ti-sapphire laser	130 fs	50 nJ	[94Sei3]
185–187.5 b	(190–203.75 nm), θ = 90 ◦ , ϕ = 73 ◦ , ooe
185–187.5 b	OPO + 5 ω of Nd:YAG laser (212.8 nm),	–	–	[95Kat]
194 b	θ = 62–74 ◦
194 b	OPO + 5 ω of Nd:YAG laser (212.8 nm), θ = 51.2 ◦ ,	5	2.2 %	[00Kag]
185 c	ϕ = 90 ◦
185 c	OPO + 5 ω of Nd:YAG laser (212.8 nm), θ = 64 ◦	–	–	[97Ume]
194 c	OPO + 5 ω of Nd:YAG laser (212.8 nm), θ = 53 ◦ ,	5	1 %	[00Kag]
195–210 c	ϕ = 0 ◦
195–210 c	Nd:YAG laser + 2 ω of dye laser,	10	14 %	[00Bha]
226–265	2 ω or 3 ω of dye laser
188–195	OPO (1.6–2.3 µm) + 5 ω of Nd:YAG laser (212.8 nm),	6	0.2–2 %,	[91Bor2]
	θ = 90 ◦ , ϕ = 90–52 ◦ , ooe		2–40 µJ
187.7–195.2	OPO (1.591–2.394 µm) + 5 ω of Nd:YAG laser,	8	3 kW (peak)	[92Wu]
	θ = 90 ◦ , ϕ = 88–50◦ , ooe
191.4	SRS in H2 (1.908 µm) + 5 ω of Nd:YAG laser,	8	10 %, 67 kW	[92Wu]
	θ = 90 ◦ , ϕ = 88–50◦ , ooe		(peak), 2 mW
			(average)
218–242	OPO (1.2–2.6 µm) + 4 ω of Nd:YAG laser (266 nm),	6	0.2–2 %,	[91Bor2]
	θ = 90 ◦ , ϕ = 90–33◦ , ooe		20–400 µJ
232.5–238	Nd:YAG laser + 2 ω of dye laser	10	–	[90Kat]
240–255	Nd:YAG laser + 2 ω of dye laser, NCSFG	10	8 %, 0.12 mJ	[93Bha]

a Li2B4O7 crystal was used. b CBO crystal was used.

c CLBO crystal was used.

Table 4.1.25. Sum frequency generation of UV radiation in KB5.

λSF	Sources of interacting radiation	τp	Conversion	Ref.
[nm]		[ns]	e ciency,
			power, energy

208–217	Two dye lasers, θ = 90 ◦ , ϕ = 90 ◦ , eeo	10	0.025 %, 1 W	[76Dun]
196.6	Dye laser + 2 ω of Nd:YAG	8	0.1 %, 0.5 mJ	[77Kat1]
207.3–217.4	Ruby laser (694.3 nm) + 2 ω of dye laser	3	0.3 %, 0.8 mJ	[77Kat2]
201–212	Nd:YAG + 2 ω of dye laser	20	10 %, 2–10 µJ	[77Sti]
185–200	Dye laser (740–910 nm) + 2 ω of dye laser (237 nm),	30	10 %, up to	[78Sti2]
	θ = 90 ◦ , eeo		10 µJ
211–216	Dye laser + Ar laser (351.1 nm)	cw regime	10−6,	[78Sti1]
			50–100 nW
196.7–226	OPO + 3 ω and 4 ω of Nd:YAG laser, θ = 90 ◦ ,	0.02	20 kW	[82Tan]
	ϕ = 65 ◦ , eeo
194.1–194.3	Dye laser + 2 ω of Ar laser (257 nm)	cw regime	2 µW	[83Hem2]
200–222	OPO + 3 ω and 4 ω of Nd:YAG laser	0.045	2 × 10−5, 1 µJ	[83Pet]
166–172	OPO (1.15–1.6 µm) + 4 ω of Ti-sapphire laser,	200 fs	0.05–0.4 MW	[98Pet2]
	θ = 90 ◦ , ϕ = 90 ◦ , eeo

Landolt-B¨ornstein

New Series VIII/1A1

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Файл: Weber H., Herziger G., Poprawe R. (eds.) Laser Fundamentals. Part 1 (Springer 2005)(263s) PEo .pdf

4.1.5 Sum frequency generation

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